HIP6601BECBZA
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- Mfr.Part #
- HIP6601BECBZA
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- SOIC
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 20,225
- In Stock ：
- 20,225
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Gate Drivers
- Width :
- 3.9mm
- JESD-609 Code :
- e3
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Temperature Grade :
- Other
- Terminal Form :
- Gull wing
- Packaging :
- Bulk
- Fall Time (Typ) :
- 20 ns
- Published :
- 2001
- Min Operating Temperature :
- 0°C
- Output Peak Current Limit-Nom :
- 0.73A
- Max Operating Temperature :
- 85°C
- Number of Drivers :
- 2
- Number of Functions :
- 1
- Pin Count :
- 8
- Mount :
- Surface Mount
- Max Supply Voltage :
- 13.2V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Terminations :
- 8
- Terminal Position :
- Dual
- Terminal Finish :
- Matte Tin (Sn) - annealed
- High Side Driver :
- yes
- Max Output Current :
- 730mA
- Qualification Status :
- Not Qualified
- Min Supply Voltage :
- 10.8V
- Current - Output :
- 730mA
- Lead Free :
- Lead Free
- Number of Pins :
- 8
- Supply Voltage :
- 12V
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Package / Case :
- SOIC
- Rise Time :
- 50ns
- Datasheets
- HIP6601BECBZA
Gate Drivers Intersil (Renesas Electronics Corporation) HIP6601BECBZA Overview
The HIP6601BECBZA from Intersil (Renesas Electronics Corporation) is a high-performance half-bridge gate driver, designed to optimize power management in a variety of applications. This IC ensures efficient driving of MOSFETs and IGBTs with its robust output stages, which provide high peak current capabilities essential for high-frequency operation. The integration of features such as under-voltage lockout and matched propagation delays enhances the performance and reliability of your power management systems, making the HIP6601BECBZA a critical component in advanced electronic designs.
HIP6601BECBZA Features
This gate driver IC boasts a range of features designed to enhance its efficiency and reliability in driving half-bridge configurations. Key features include: - High peak output drive current, suitable for high-power applications. - Integrated under-voltage lockout for improved safety and performance. - Matched propagation delays to ensure balanced switching. - Compact 8SOIC package, ideal for space-constrained applications.
HIP6601BECBZA Applications
- Motor Control Systems: Utilizes high peak current and fast switching capabilities to enhance the performance and efficiency of motor drives.
- Power Supplies: Ensures stable and efficient power delivery in switch-mode power supplies (SMPS) with its robust driving capabilities.
- DC-DC Converters: Employs matched propagation delays to ensure efficient and reliable switching in high-frequency DC-DC conversion applications.
- Solar Inverters: Provides reliable gate driving for MOSFETs and IGBTs used in solar inverters, maximizing efficiency and power output.
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