HIP6601BECBZ-T

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Mfr.Part #
HIP6601BECBZ-T
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
SOIC
Datasheet
Download
Description
IC GATE DRVR HALF-BRIDGE 8SOIC
Stock
14,178
In Stock :
14,178

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Gate Drivers
Min Operating Temperature :
0°C
Supplier Device Package :
8-SOIC-EP
Fall Time (Typ) :
20 ns
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Logic Voltage - VIL, VIH :
--
Rise / Fall Time (Typ) :
20ns, 20ns
Channel Type :
SYNCHRONOUS
Terminal Finish :
Matte Tin (Sn) - annealed
Max Output Current :
730mA
Rise Time :
50ns
Mounting Type :
Surface Mount
Temperature Grade :
Other
Lead Free :
Lead Free
Output Peak Current Limit-Nom :
0.73A
Terminal Form :
Gull wing
Terminal Position :
Dual
Base Part Number :
HIP6601B
JESD-609 Code :
e3
Mount :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
40
Number of Functions :
1
Number of Drivers :
2
High Side Voltage - Max (Bootstrap) :
15V
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Width :
3.9mm
Driven Configuration :
Half-Bridge
Series :
--
Supply Voltage :
12V
Gate Type :
N-Channel MOSFET
Voltage - Supply :
10.8 V ~ 13.2 V
Input Type :
Non-Inverting
Max Operating Temperature :
85°C
RoHS Status :
RoHS Compliant
Number of Pins :
8
Peak Reflow Temperature (Cel) :
260
Max Supply Voltage :
13.2V
Published :
2001
Package / Case :
SOIC
Operating Temperature :
0°C ~ 125°C (TJ)
Current - Peak Output (Source, Sink) :
--
Number of Terminations :
8
Interface IC Type :
HALF BRIDGE BASED MOSFET DRIVER
Qualification Status :
Not Qualified
High Side Driver :
yes
Min Supply Voltage :
10.8V
Pin Count :
8
Current - Output :
730mA
Datasheets
HIP6601BECBZ-T
Introducing Gate Drivers Intersil (Renesas Electronics Corporation) HIP6601BECBZ-T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Base Part Number:HIP6601B, Number of Pins:8, Package / Case:SOIC, Operating Temperature:0°C ~ 125°C (TJ), Number of Terminations:8, HIP6601BECBZ-T pinout, HIP6601BECBZ-T datasheet PDF, HIP6601BECBZ-T amp .Beyond Gate Drivers Intersil (Renesas Electronics Corporation) HIP6601BECBZ-T ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) HIP6601BECBZ-T


Gate Drivers Intersil (Renesas Electronics Corporation) HIP6601BECBZ-T Overview

Introducing the HIP6601BECBZ-T from Intersil (Renesas Electronics Corporation), a high-performance gate driver designed for precision and efficiency in a variety of demanding applications. This IC gate driver is tailored to manage half-bridge circuits with enhanced control and reliability. Its compact 8SOIC package enables integration into tighter spaces while maintaining high operational standards. The HIP6601BECBZ-T is ideal for developers looking for robust solutions to drive MOSFETs and IGBTs, ensuring optimal performance in critical systems.

HIP6601BECBZ-T Features

The HIP6601BECBZ-T includes multiple features designed for advanced gate driving capability. It offers integrated bootstrap diode, under-voltage lockout for both channels, and independent high and low driver channels, which ensures safe operation under varying conditions. The high peak drive current and fast switching capabilities reduce power loss and improve efficiency, making it a superior choice for sophisticated electronic driving solutions.

HIP6601BECBZ-T Applications

  • Switch Mode Power Supplies (SMPS) - Utilizes efficient switching to minimize energy loss and enhance power supply reliability.
  • Motor Controllers - Provides robust drive currents and precision control required for motor management in industrial and automotive applications.
  • Solar Inverters - Ensures stable operation and longevity in harsh environmental conditions, supporting renewable energy technologies.
  • Electric Vehicle (EV) Inverters - Drives high-power IGBTs for effective energy conversion in electric vehicles, contributing to overall vehicle performance and efficiency.
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