HIP6601BECBZ-T
- Mfr.Part #
- HIP6601BECBZ-T
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- SOIC
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 14,178
- In Stock :
- 14,178
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Gate Drivers
- Min Operating Temperature :
- 0°C
- Supplier Device Package :
- 8-SOIC-EP
- Fall Time (Typ) :
- 20 ns
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Logic Voltage - VIL, VIH :
- --
- Rise / Fall Time (Typ) :
- 20ns, 20ns
- Channel Type :
- SYNCHRONOUS
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Max Output Current :
- 730mA
- Rise Time :
- 50ns
- Mounting Type :
- Surface Mount
- Temperature Grade :
- Other
- Lead Free :
- Lead Free
- Output Peak Current Limit-Nom :
- 0.73A
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Base Part Number :
- HIP6601B
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Functions :
- 1
- Number of Drivers :
- 2
- High Side Voltage - Max (Bootstrap) :
- 15V
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Width :
- 3.9mm
- Driven Configuration :
- Half-Bridge
- Series :
- --
- Supply Voltage :
- 12V
- Gate Type :
- N-Channel MOSFET
- Voltage - Supply :
- 10.8 V ~ 13.2 V
- Input Type :
- Non-Inverting
- Max Operating Temperature :
- 85°C
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Max Supply Voltage :
- 13.2V
- Published :
- 2001
- Package / Case :
- SOIC
- Operating Temperature :
- 0°C ~ 125°C (TJ)
- Current - Peak Output (Source, Sink) :
- --
- Number of Terminations :
- 8
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Qualification Status :
- Not Qualified
- High Side Driver :
- yes
- Min Supply Voltage :
- 10.8V
- Pin Count :
- 8
- Current - Output :
- 730mA
- Datasheets
- HIP6601BECBZ-T

Gate Drivers Intersil (Renesas Electronics Corporation) HIP6601BECBZ-T Overview
Introducing the HIP6601BECBZ-T from Intersil (Renesas Electronics Corporation), a high-performance gate driver designed for precision and efficiency in a variety of demanding applications. This IC gate driver is tailored to manage half-bridge circuits with enhanced control and reliability. Its compact 8SOIC package enables integration into tighter spaces while maintaining high operational standards. The HIP6601BECBZ-T is ideal for developers looking for robust solutions to drive MOSFETs and IGBTs, ensuring optimal performance in critical systems.
HIP6601BECBZ-T Features
The HIP6601BECBZ-T includes multiple features designed for advanced gate driving capability. It offers integrated bootstrap diode, under-voltage lockout for both channels, and independent high and low driver channels, which ensures safe operation under varying conditions. The high peak drive current and fast switching capabilities reduce power loss and improve efficiency, making it a superior choice for sophisticated electronic driving solutions.
HIP6601BECBZ-T Applications
- Switch Mode Power Supplies (SMPS) - Utilizes efficient switching to minimize energy loss and enhance power supply reliability.
- Motor Controllers - Provides robust drive currents and precision control required for motor management in industrial and automotive applications.
- Solar Inverters - Ensures stable operation and longevity in harsh environmental conditions, supporting renewable energy technologies.
- Electric Vehicle (EV) Inverters - Drives high-power IGBTs for effective energy conversion in electric vehicles, contributing to overall vehicle performance and efficiency.
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