HIP2101EIBT
- Mfr.Part #
- HIP2101EIBT
- Manufacturer
- Intersil
- Package / Case
- SOIC
- Datasheet
- Download
- Description
- HALF BRIDGE BASED MOSFET DRIVER
- Stock
- 29,701
- In Stock :
- 29,701
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- Manufacturer :
- Intersil
- Product Category :
- Gate Drivers
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- High Side Voltage - Max (Bootstrap) :
- 114V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Channel Type :
- Independent
- Qualification Status :
- Not Qualified
- Logic Voltage - VIL, VIH :
- 0.8V, 2.2V
- Series :
- --
- Package / Case :
- SOIC
- Turn Off Time :
- 0.056 µs
- RoHS Status :
- RoHS Compliant
- JESD-609 Code :
- e0
- Current - Peak Output (Source, Sink) :
- 2A, 2A
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Driven Configuration :
- Half-Bridge
- Height Seated (Max) :
- 1.68mm
- Terminal Form :
- Gull wing
- Number of Terminations :
- 8
- Voltage - Supply :
- 9 V ~ 14 V
- Width :
- 3.9mm
- Number of Drivers :
- 2
- Peak Reflow Temperature (Cel) :
- 240
- Turn On Time :
- 0.056 µs
- Terminal Position :
- Dual
- Min Operating Temperature :
- -40°C
- Max Operating Temperature :
- 125°C
- Pin Count :
- 8
- Output Peak Current Limit-Nom :
- 2A
- High Side Driver :
- yes
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Length :
- 4.89mm
- ECCN Code :
- EAR99
- Number of Functions :
- 1
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Temperature Grade :
- Automotive
- Lead Free :
- Contains Lead
- Supplier Device Package :
- 8-SOIC-EP
- Supply Voltage-Min (Vsup) :
- 9V
- Base Part Number :
- HIP2101
- Published :
- 2001
- JESD-30 Code :
- R-PDSO-G8
- Input Type :
- Non-Inverting
- Rise / Fall Time (Typ) :
- 10ns, 10ns
- Supply Voltage :
- 12V
- Gate Type :
- N-Channel MOSFET
- Supply Voltage-Max (Vsup) :
- 14V
- Mount :
- Surface Mount
- Number of Outputs :
- 2
- Datasheets
- HIP2101EIBT

Gate Drivers Intersil HIP2101EIBT Overview
The HIP2101EIBT from Intersil is a robust half-bridge based MOSFET driver, engineered to optimize performance in high-efficiency, high-frequency switching applications. This advanced gate driver is designed to drive N-channel MOSFETs in a synchronous rectifier configuration, ensuring minimal switching losses and enhanced power management. Its integration features, such as under-voltage lockout and a bootstrap diode, make it an ideal choice for developing compact and reliable high-performance power systems. The key attribute of the Gate Drivers Intersil HIP2101EIBT is its ability to enhance system reliability and efficiency, making it highly suitable for bulk purchasing by businesses aiming to leverage advanced technology in power conversion and management.
HIP2101EIBT Features
The HIP2101EIBT gate driver is packed with features designed for superior performance in power management systems. It includes a built-in bootstrap diode, which simplifies the PCB layout and reduces external component count. Its high peak drive current and low propagation delay ensure effective driving and fast switching of MOSFETs. Additionally, the HIP2101EIBT is compatible with a wide range of supply voltages, adding to its versatility in various application scenarios.
HIP2101EIBT Applications
- Switch Mode Power Supplies (SMPS): Improves efficiency and power density by driving MOSFETs in compact designs.
- DC-DC Converters: Utilizes high switching frequencies to enhance performance and reduce size.
- Motor Drives: Provides robust drive capabilities and operational stability for high-performance motor control applications.
- Renewable Energy Systems: Ensures reliable operation and efficiency in energy conversion processes in solar inverters and wind turbine converters.
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