HIP2100IRZ
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- Mfr.Part #
- HIP2100IRZ
- Manufacturer
- Intersil
- Package / Case
- VQFN
- Datasheet
- Download
- Description
- HALF BRIDGE BASED MOSFET DRIVER,
- Stock
- 39,580
- In Stock ：
- 39,580
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- Manufacturer :
- Intersil
- Product Category :
- Gate Drivers
- Rise Time :
- 10ns
- Mount :
- Surface Mount
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Supply Voltage :
- 12V
- Terminal Position :
- QUAD
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Width :
- 5mm
- JESD-30 Code :
- S-PQCC-N16
- Height Seated (Max) :
- 1mm
- Nominal Supply Current :
- 2.5mA
- Number of Terminations :
- 16
- Max Operating Temperature :
- 150°C
- Temperature Grade :
- Automotive
- Min Supply Voltage :
- 9V
- Rise / Fall Time (Typ) :
- 10ns, 10ns
- Channel Type :
- Independent
- Current - Peak Output (Source, Sink) :
- 2A, 2A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Input Type :
- Non-Inverting
- Published :
- 2001
- Factory Lead Time :
- 10 Weeks
- High Side Driver :
- yes
- High Side Voltage - Max (Bootstrap) :
- 114V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Driven Configuration :
- Half-Bridge
- Pin Count :
- 16, 8
- Lead Free :
- Lead Free
- Base Part Number :
- HIP2100
- Output Peak Current Limit-Nom :
- 2A
- Qualification Status :
- Not Qualified
- Max Supply Voltage :
- 114V
- Terminal Pitch :
- 0.8mm
- Turn On Time :
- 0.045 µs
- Turn On Delay Time :
- 8 ns
- Length :
- 5mm
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Voltage - Supply :
- 9 V ~ 14 V
- Terminal Form :
- NO LEAD
- Turn Off Time :
- 0.045 µs
- Turn-Off Delay Time :
- 8 ns
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 3.3W
- Max Supply Current :
- 2.5mA
- Series :
- --
- Mounting Type :
- Surface Mount
- Package / Case :
- VQFN
- RoHS Status :
- RoHS Compliant
- Gate Type :
- N-Channel MOSFET
- Supplier Device Package :
- 16-QFN-EP (5x5)
- Number of Drivers :
- 2
- Max Output Current :
- 2A
- Logic Voltage - VIL, VIH :
- 4V, 7V
- Current - Output :
- 2A
- Number of Functions :
- 1
- Fall Time (Typ) :
- 10 ns
- Min Operating Temperature :
- -40°C
- Datasheets
- HIP2100IRZ
Gate Drivers Intersil HIP2100IRZ Overview
Introducing the HIP2100IRZ from Intersil, a sophisticated Half Bridge Based MOSFET Driver designed to enhance the performance and reliability of your high-frequency switching applications. This innovative product is crucial for developers requiring efficient power management and precise control in their circuit designs. The Gate Drivers Intersil HIP2100IRZ integrates seamlessly into your system, providing a robust solution for driving MOSFETs in a compact, efficient package. Its advanced features ensure reduced system complexity and improved overall efficiency, making it an excellent choice for bulk purchasing by B2B customers looking to optimize their power systems.
HIP2100IRZ Features
The HIP2100IRZ MOSFET Driver offers a range of features designed for superior performance in demanding environments. These include high peak output drive current, independent high and low side drive outputs, and under-voltage lockout for both channels. Additionally, the driver is capable of operating up to a 100V max supply voltage which makes it versatile for various high power applications. Its fast propagation times ensure minimal delay and high efficiency in switching, ideal for high-frequency operations.
HIP2100IRZ Applications
- DC-DC Converters: Utilizes the HIP2100IRZ to drive MOSFETs, facilitating efficient power conversion and management in devices requiring stable DC output from varying input sources.
- Motor Control Systems: Employs the driver for precise control over motor operations, enhancing performance and reliability in electric vehicles and industrial automation systems.
- Class-D Amplifiers: Integrates the HIP2100IRZ for managing power stages in audio amplifiers, ensuring high-quality sound reproduction with efficient power usage.
- Solar Power Inverters: Uses the driver to optimize the conversion of DC to AC power in solar installations, improving the efficiency and reliability of solar panels and related systems.
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