FQPF9N25CT

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

Package / Case :

TO-220-3 Full Pack

Power Dissipation-Max :

38W Tc

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

DS Breakdown Voltage-Min :

250V

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e3

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.43Ohm

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

35.2A

Drain to Source Voltage (Vdss) :

250V

Rds On (Max) @ Id, Vgs :

430m Ω @ 4.4A, 10V

Qualification Status :

COMMERCIAL

Case Connection :

Isolated

Number of Elements :

1

Mounting Type :

Through Hole

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

8.8A

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Avalanche Energy Rating (Eas) :

285 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

8.8A Tc