FQPF90N10V2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

90A Tc

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.01Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

100V

Reach Compliance Code :

Unknown

Qualification Status :

COMMERCIAL

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Avalanche Energy Rating (Eas) :

2430 mJ

Power Dissipation-Max :

83W Tc

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

360A

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

100V

Gate Charge (Qg) (Max) @ Vgs :

191nC @ 10V

Pbfree Code :

yes

Number of Terminations :

3

Surface Mount :

No

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

90A

Pin Count :

3

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Series :

QFET®

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

10m Ω @ 45A, 10V

Package / Case :

TO-220-3 Full Pack

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

6.15pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Peak Reflow Temperature (Cel) :

Not Applicable