FQPF630

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

38W

Height :

9.19mm

Turn-Off Delay Time :

47 ns

Mounting Type :

Through Hole

ECCN Code :

EAR99

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Case Connection :

Isolated

Packaging :

Tube

Factory Lead Time :

4 Weeks

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.4Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

6.3A

Pulsed Drain Current-Max (IDM) :

25.2A

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

400m Ω @ 3.15A, 10V

Lead Free :

Lead Free

Vgs (Max) :

±25V

Voltage - Rated DC :

200V

JESD-609 Code :

e3

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

64 ns

Transistor Application :

SWITCHING

Turn On Delay Time :

8 ns

Package / Case :

TO-220-3 Full Pack

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

6.3A Tc

Power Dissipation-Max :

38W Tc

Width :

4.7mm

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Current Rating :

6.3A

Vgs(th) (Max) @ Id :

4V @ 250µA

Weight :

2.27g

Drain to Source Breakdown Voltage :

200V

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Gate to Source Voltage (Vgs) :

25V

Rise Time :

75ns

Radiation Hardening :

No

Length :

10.16mm

Operating Temperature :

-55°C~150°C TJ

Published :

2000

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single