FQP19N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

150mOhm

Dual Supply Voltage :

200V

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

200V

Length :

10.2mm

Transistor Application :

SWITCHING

Reverse Recovery Time :

140 ns

Factory Lead Time :

4 Weeks

Current Rating :

19.4A

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

19.4A Tc

Pulsed Drain Current-Max (IDM) :

78A

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Width :

4.7mm

Weight :

1.8g

Pbfree Code :

yes

Mounting Type :

Through Hole

Radiation Hardening :

No

Number of Elements :

1

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Height :

15.38mm

Turn On Delay Time :

20 ns

Power Dissipation-Max :

140W Tc

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Number of Terminations :

3

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Rise Time :

190ns

Rds On (Max) @ Id, Vgs :

150m Ω @ 9.7A, 10V

Published :

2000

Lead Pitch :

2.54mm

Turn-Off Delay Time :

55 ns

Drain to Source Breakdown Voltage :

200V

Termination :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Continuous Drain Current (ID) :

19.4A

Avalanche Energy Rating (Eas) :

250 mJ

Packaging :

Tube

Nominal Vgs :

5 V

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 25V

Series :

QFET®

Fall Time (Typ) :

80 ns

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Power Dissipation :

140W

Threshold Voltage :

5V

Terminal Finish :

Tin (Sn)