FQP12P10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Factory Lead Time :

5 Weeks

Element Configuration :

Single

Power Dissipation :

75W

Rds On (Max) @ Id, Vgs :

290m Ω @ 5.75A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Pulsed Drain Current-Max (IDM) :

46A

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

-100V

Continuous Drain Current (ID) :

11.5A

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-220AB

Drain to Source Breakdown Voltage :

-100V

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

-11.5A

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

ECCN Code :

EAR99

FET Type :

P-Channel

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

160ns

Operating Mode :

ENHANCEMENT MODE

Weight :

1.8g

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

370 mJ

Drain-source On Resistance-Max :

0.29Ohm

Turn-Off Delay Time :

35 ns

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Power Dissipation-Max :

75W Tc

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Series :

QFET®

Lead Free :

Lead Free

Published :

2013

JESD-609 Code :

e3

Turn On Delay Time :

15 ns

Drain to Source Voltage (Vdss) :

100V

Current - Continuous Drain (Id) @ 25°C :

11.5A Tc

JESD-30 Code :

R-PSFM-T3

Fall Time (Typ) :

60 ns

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V