FQI5N80TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Surface Mount :

No

Transistor Application :

SWITCHING

Series :

QFET®

JESD-30 Code :

R-PSIP-T3

Avalanche Energy Rating (Eas) :

590 mJ

Qualification Status :

COMMERCIAL

Power Dissipation-Max :

3.13W Ta 140W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1.25pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

4.8A Tc

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

800V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

FET Type :

N-Channel

Terminal Position :

Single

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

4.8A

Packaging :

Tube

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

800V

Pulsed Drain Current-Max (IDM) :

19.2A

Reach Compliance Code :

Unknown

Pin Count :

3

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

2.6 Ω @ 2.4A, 10V