FQD2N90TM
- Mfr.Part #
- FQD2N90TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 1.7A DPAK
- Stock
- 994
- In Stock :
- 994
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 15 ns
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±30V
- Fall Time (Typ) :
- 30 ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- Gull wing
- Rise Time :
- 35ns
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 6.8A
- Number of Terminations :
- 2
- Power Dissipation :
- 2.5W
- Series :
- QFET®
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 20 ns
- Rds On (Max) @ Id, Vgs :
- 7.2 Ω @ 850mA, 10V
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 1.7A
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 1.7A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 500pF @ 25V
- Voltage - Rated DC :
- 900V
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 900V
- Current Rating :
- 1.7A
- Gate to Source Voltage (Vgs) :
- 30V
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 2.5W Ta 50W Tc
- Weight :
- 260.37mg
- JESD-30 Code :
- R-PSSO-G2
- Mount :
- Surface Mount
- Datasheets
- FQD2N90TM

N-Channel Tape & Reel (TR) 7.2 Ω @ 850mA, 10V ±30V 500pF @ 25V 15nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD2N90TM Overview
The maximum input capacitance of this device is 500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1.7A.When VGS=900V, and ID flows to VDS at 900VVDS, the drain-source breakdown voltage is 900V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 20 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 6.8A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
FQD2N90TM Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 6.8A.
FQD2N90TM Applications
There are a lot of ON Semiconductor
FQD2N90TM applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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