FQAF6N80

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1.5pF @ 25V

Reach Compliance Code :

Unknown

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Case Connection :

Isolated

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

Power Dissipation-Max :

90W Tc

Transistor Element Material :

SILICON

Surface Mount :

No

Qualification Status :

COMMERCIAL

Mounting Type :

Through Hole

FET Type :

N-Channel

DS Breakdown Voltage-Min :

800V

Package / Case :

TO-3P-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Number of Elements :

1

Series :

QFET®

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

800V

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

4.4A

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±30V

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

17.6A

Rds On (Max) @ Id, Vgs :

1.95 Ω @ 2.2A, 10V

Packaging :

Tube

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Avalanche Energy Rating (Eas) :

680 mJ

Peak Reflow Temperature (Cel) :

Not Applicable