FP25R12KT4BOSA1

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Mfr.Part #
FP25R12KT4BOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1200V 25A 160W
Stock
1,915
In Stock :
1,915

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Number of Elements :
7
Polarity :
NPN
RoHS Status :
RoHS Compliant
Pin Count :
23
Current - Collector (Ic) (Max) :
25A
Surface Mount :
No
Power - Max :
160W
Terminal Form :
UNSPECIFIED
ECCN Code :
EAR99
Vce(on) (Max) @ Vge, Ic :
2.15V @ 15V, 25A
Pbfree Code :
No
Lead Free :
Contains Lead
IGBT Type :
Trench Field Stop
Transistor Application :
POWER CONTROL
Turn Off Time-Nom (toff) :
620 ns
Number of Pins :
23
NTC Thermistor :
yes
Configuration :
Three Phase Inverter
Input :
Standard
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
Not Applicable
Halogen Free :
Not Halogen Free
Voltage - Collector Emitter Breakdown (Max) :
1200V
Operating Temperature :
-40°C~150°C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Case Connection :
Isolated
Input Capacitance (Cies) @ Vce :
1.45nF @ 25V
Terminal Position :
UPPER
Published :
2002
Package / Case :
Module
Current - Collector Cutoff (Max) :
1mA
Turn On Time :
210 ns
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Factory Lead Time :
12 Weeks
Number of Terminations :
23
Mounting Type :
Chassis Mount
Datasheets
FP25R12KT4BOSA1
Introducing Transistors - IGBTs - Modules Infineon Technologies FP25R12KT4BOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:23, Operating Temperature:-40°C~150°C, Package / Case:Module, Number of Terminations:23, Mounting Type:Chassis Mount, FP25R12KT4BOSA1 pinout, FP25R12KT4BOSA1 datasheet PDF, FP25R12KT4BOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FP25R12KT4BOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FP25R12KT4BOSA1


FP25R12KT4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FP25R12KT4BOSA1 Description


FP25R12KT4BOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FP25R12KT4BOSA1 operates between -40°C~150°C TJ, and its Max Collector Current is 25A. The FP25R12KT4BOSA1 has 23 pins and it is available in Module packaging way. FP25R12KT4BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.



FP25R12KT4BOSA1 Features


  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A

  • Input Capacitance (Cies) @ Vce: 1.45nF @ 25V

  • Voltage - Collector Emitter Breakdown (Max): 1200V

  • Turn Off Time-Nom (toff): 620 ns

  • Operating Temperature: -40°C~150°C



FP25R12KT4BOSA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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