FGH40T65UQDF-F155
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- Mfr.Part #
- FGH40T65UQDF-F155
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- FS4TIGBT TO247 40A 650V
- Stock
- 353
- In Stock ：
- 353
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Switching Energy :
- 989μJ (on), 310μJ (off)
- Weight :
- 6.39g
- Factory Lead Time :
- 13 Weeks
- Gate Charge :
- 306nC
- Package / Case :
- TO-247-3
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Published :
- 2014
- RoHS Status :
- RoHS Compliant
- Vce(on) (Max) @ Vge, Ic :
- 1.67V @ 15V, 40A
- Voltage - Collector Emitter Breakdown (Max) :
- 650V
- Current - Collector Pulsed (Icm) :
- 120A
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Mount :
- Through Hole
- Current - Collector (Ic) (Max) :
- 80A
- Test Condition :
- 400V, 40A, 6 Ω, 15V
- Pbfree Code :
- yes
- IGBT Type :
- Trench Field Stop
- Reverse Recovery Time :
- 89ns
- Input Type :
- Standard
- Td (on/off) @ 25°C :
- 32ns/271ns
- Power - Max :
- 231W
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- FGH40T65UQDF-F155
FGH40T65UQDF-F155 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGH40T65UQDF-F155 Description
The new line of field stop 4th generation IGBTs from ON Semiconductor use revolutionary field stop IGBT technology to provide enhanced conduction and switching performance as well as simple parallel operation. This device is ideal for applications requiring resonant or gentle switching, such MWO and induction heating.
FGH40T65UQDF-F155 Features
-
Max Junction Temperature 175°C
-
Positive Temperature Co?efficient for Easy Parallel Operating
-
High Current Capability
-
Low Saturation Voltage: VCE(sat) = 1.33 V (Typ.) @ IC = 40 A
-
100% of the Parts Tested for ILM
-
High Input Impedance
-
Fast Switching
-
Tighten Parameter Distribution
-
This Device is Pb?Free and is RoHS Compliant
FGH40T65UQDF-F155 Applications
-
Induction Heating
-
MWO
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