FGH15T120SMD-F155

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Element Configuration :

Single

Mounting Type :

Through Hole

Number of Pins :

3

Input Type :

Standard

Power Dissipation :

333W

IGBT Type :

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max) :

1200V

Collector Emitter Voltage (VCEO) :

1.2kV

Polarity/Channel Type :

N-Channel

Mount :

Through Hole

Gate-Emitter Voltage-Max :

25V

Gate Charge :

128nC

Max Power Dissipation :

333W

Radiation Hardening :

No

Weight :

6.39g

Switching Energy :

1.15mJ (on), 460μJ (off)

Factory Lead Time :

6 Weeks

Gate-Emitter Thr Voltage-Max :

7.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Td (on/off) @ 25°C :

32ns/490ns

Max Collector Current :

30A

Current - Collector Pulsed (Icm) :

60A

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 15A

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Published :

2013

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

1.2kV

Reverse Recovery Time :

72ns

Test Condition :

600V, 15A, 34 Ω, 15V

Package / Case :

TO-247-3

Collector Emitter Saturation Voltage :

1.9V

RoHS Status :

ROHS3 Compliant