FGA15S125P

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Collector Emitter Breakdown Voltage :

1.25kV

Mounting Type :

Through Hole

Max Power Dissipation :

136W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Voltage - Collector Emitter Breakdown (Max) :

1250V

Collector Emitter Saturation Voltage :

2.72V

Pbfree Code :

yes

Package / Case :

TO-3P-3, SC-65-3

Height :

20.1mm

JESD-609 Code :

e3

Weight :

6.401g

Number of Elements :

1

IGBT Type :

Trench

Published :

2013

Collector Emitter Voltage (VCEO) :

1.25kV

Transistor Application :

POWER CONTROL

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Current - Collector Pulsed (Icm) :

45A

Vce(on) (Max) @ Vge, Ic :

2.72V @ 15V, 15A

Input Type :

Standard

Gate-Emitter Thr Voltage-Max :

7.5V

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

136W

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Time :

331 ns

Factory Lead Time :

4 Weeks

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Element Material :

SILICON

Gate Charge :

129nC

ECCN Code :

EAR99

Mount :

Through Hole

Width :

5mm

Max Collector Current :

30A

Element Configuration :

Single

Packaging :

Tube

Length :

15.8mm

Terminal Finish :

Tin (Sn)

HTS Code :

8541.29.00.95

Gate-Emitter Voltage-Max :

25V

Turn Off Time-Nom (toff) :

670 ns