FDMC2512SDC

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Mfr.Part #
FDMC2512SDC
Manufacturer
onsemi
Package / Case
Datasheet
Download
Description
MOSFET N-CH 25V 32A 8PQFN
Stock
16,218
In Stock :
16,218

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tape and Reel (TR)
Turn On Delay Time :
14 ns
Number of Terminations :
5
Weight :
32.13mg
Terminal Finish :
Tin (Sn)
Transistor Application :
SWITCHING
Length :
3.3mm
Continuous Drain Current (ID) :
32A
Height :
950μm
Width :
3.3mm
Power Dissipation :
66W
Fall Time (Typ) :
5 ns
Case Connection :
DRAIN
Radiation Hardening :
No
Factory Lead Time :
8 Weeks
Terminal Position :
Dual
Input Capacitance :
4.41nF
Max Operating Temperature :
150°C
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
200A
Drain to Source Resistance :
2.95mOhm
Drain to Source Breakdown Voltage :
25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Turn-Off Delay Time :
34 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Max Power Dissipation :
3W
Polarity/Channel Type :
N-Channel
Pbfree Code :
yes
Lead Free :
Lead Free
Rds On Max :
2 mΩ
Rise Time :
7ns
JESD-609 Code :
e3
Drain to Source Voltage (Vdss) :
25V
JESD-30 Code :
S-PDSO-N5
Drain Current-Max (Abs) (ID) :
40A
Number of Pins :
8
Gate to Source Voltage (Vgs) :
20V
Mount :
Surface Mount
Min Operating Temperature :
-55°C
Element Configuration :
Single
JEDEC-95 Code :
MO-240BA
ECCN Code :
EAR99
Datasheets
FDMC2512SDC
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMC2512SDC from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:5, Number of Pins:8, FDMC2512SDC pinout, FDMC2512SDC datasheet PDF, FDMC2512SDC amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMC2512SDC ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMC2512SDC


Tape & Reel (TR) 25V

FDMC2512SDC Overview


The drain current is the maximum continuous current the device can conduct, and this device has 32A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 25V, and this device has a drainage-to-source breakdown voltage of 25VV.Drain current refers to the maximum continuous current a device can conduct, and it is 40A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 34 ns.Peak drain current is 200A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 2.95mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 25V is required between drain and source (Vdss).

FDMC2512SDC Features


a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 34 ns
based on its rated peak drain current 200A.
single MOSFETs transistor is 2.95mOhm
a 25V drain to source voltage (Vdss)


FDMC2512SDC Applications


There are a lot of ON Semiconductor
FDMC2512SDC applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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