FDMC2512SDC
- Mfr.Part #
- FDMC2512SDC
- Manufacturer
- onsemi
- Package / Case
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 32A 8PQFN
- Stock
- 16,218
- In Stock :
- 16,218
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 14 ns
- Number of Terminations :
- 5
- Weight :
- 32.13mg
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Length :
- 3.3mm
- Continuous Drain Current (ID) :
- 32A
- Height :
- 950μm
- Width :
- 3.3mm
- Power Dissipation :
- 66W
- Fall Time (Typ) :
- 5 ns
- Case Connection :
- DRAIN
- Radiation Hardening :
- No
- Factory Lead Time :
- 8 Weeks
- Terminal Position :
- Dual
- Input Capacitance :
- 4.41nF
- Max Operating Temperature :
- 150°C
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 200A
- Drain to Source Resistance :
- 2.95mOhm
- Drain to Source Breakdown Voltage :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 34 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Max Power Dissipation :
- 3W
- Polarity/Channel Type :
- N-Channel
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Rds On Max :
- 2 mΩ
- Rise Time :
- 7ns
- JESD-609 Code :
- e3
- Drain to Source Voltage (Vdss) :
- 25V
- JESD-30 Code :
- S-PDSO-N5
- Drain Current-Max (Abs) (ID) :
- 40A
- Number of Pins :
- 8
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Element Configuration :
- Single
- JEDEC-95 Code :
- MO-240BA
- ECCN Code :
- EAR99
- Datasheets
- FDMC2512SDC

Tape & Reel (TR) 25V
FDMC2512SDC Overview
The drain current is the maximum continuous current the device can conduct, and this device has 32A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 25V, and this device has a drainage-to-source breakdown voltage of 25VV.Drain current refers to the maximum continuous current a device can conduct, and it is 40A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 34 ns.Peak drain current is 200A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 2.95mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 25V is required between drain and source (Vdss).
FDMC2512SDC Features
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 34 ns
based on its rated peak drain current 200A.
single MOSFETs transistor is 2.95mOhm
a 25V drain to source voltage (Vdss)
FDMC2512SDC Applications
There are a lot of ON Semiconductor
FDMC2512SDC applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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