FDD6637-F085

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

35V

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Series :

Automotive, AEC-Q101, PowerTrench®

Vgs (Max) :

±25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

21A

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

61 mJ

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0116Ohm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

FET Type :

P-Channel

Number of Elements :

1

Pbfree Code :

yes

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2370pF @ 20V

Rds On (Max) @ Id, Vgs :

11.6m Ω @ 14A, 10V

Terminal Form :

Gull wing

Additional Feature :

ULTRA-LOW RESISTANCE

DS Breakdown Voltage-Min :

35V

Power Dissipation-Max :

68W Tc