FDC634P
- Mfr.Part #
- FDC634P
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3.5A SUPERSOT6
- Stock
- 591
- In Stock :
- 591
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Termination :
- SMD/SMT
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Number of Pins :
- 6
- FET Type :
- P-Channel
- Rise Time :
- 9ns
- Height :
- 1mm
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- REACH SVHC :
- No SVHC
- Current Rating :
- -3.5A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Drain to Source Breakdown Voltage :
- -20V
- Published :
- 2001
- Dual Supply Voltage :
- -20V
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 8V
- Transistor Element Material :
- SILICON
- Weight :
- 36mg
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A Ta
- Turn-Off Delay Time :
- 27 ns
- Factory Lead Time :
- 10 Weeks
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 10 ns
- Drain to Source Voltage (Vdss) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Width :
- 1.7mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Radiation Hardening :
- No
- Number of Terminations :
- 6
- Resistance :
- 80mOhm
- Vgs (Max) :
- ±8V
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Nominal Vgs :
- -800 mV
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 3.5A, 4.5V
- Continuous Drain Current (ID) :
- -3.5A
- Voltage - Rated DC :
- -20V
- RoHS Status :
- ROHS3 Compliant
- Series :
- PowerTrench®
- Fall Time (Typ) :
- 9 ns
- Power Dissipation-Max :
- 1.6W Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 779pF @ 10V
- Length :
- 3mm
- Threshold Voltage :
- -800mV
- Element Configuration :
- Single
- Power Dissipation :
- 1.6W
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 4.5V
- Datasheets
- FDC634P

P-Channel Tape & Reel (TR) 80m Ω @ 3.5A, 4.5V ±8V 779pF @ 10V 10nC @ 4.5V 20V SOT-23-6 Thin, TSOT-23-6
FDC634P Description
FDC634P MOSFET is based on established silicon processes that provide designers with an extensive range of devices. FDC634P datasheet available in a range of through-hole and surface-mount packaging with standard footprints to facilitate designing. ON Semiconductor FDC634P is used in power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
FDC634P Features
High performance trench technology
RDS(ON) = 80 m|? @ VGS = -4.5 V
Low gate charge
RDS(ON) = 110 m|? @ VGS = -2.5 V
3.5 A, -20 V
FDC634P Applications
Power factor correction
Electronic lamp ballasts
Flat panel display
TV power
ATX
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