FCPF16N60NT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Nominal Vgs :

2 V

Weight :

2.27g

Package / Case :

TO-220-3 Full Pack

Transistor Element Material :

SILICON

Turn-Off Delay Time :

60.3 ns

Qualification Status :

Not Qualified

Rise Time :

15.5ns

Fall Time (Typ) :

20.2 ns

Gate to Source Voltage (Vgs) :

30V

REACH SVHC :

No SVHC

Vgs (Max) :

±30V

Element Configuration :

Single

Factory Lead Time :

12 Weeks

Resistance :

199mOhm

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

35.7W Tc

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

16A

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Power Dissipation :

357W

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

JESD-609 Code :

e3

Length :

10.16mm

Height :

15.9mm

Published :

2009

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

600V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

SupreMOS™

Width :

4.7mm

Number of Terminations :

3

Packaging :

Tube

Pbfree Code :

yes

Number of Elements :

1

Threshold Voltage :

2V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

199m Ω @ 8A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2170pF @ 100V

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

48A

Gate Charge (Qg) (Max) @ Vgs :

52.3nC @ 10V

Case Connection :

Isolated

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Reach Compliance Code :

not_compliant

Turn On Delay Time :

15.8 ns