DTB123YCT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Base (R1) :

2.2 k Ω

Number of Pins :

3

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

TIN SILVER COPPER

Published :

1998

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.5

JESD-609 Code :

e1

Transistor Type :

PNP - Pre-Biased

Number of Terminations :

3

Resistor - Emitter Base (R2) :

10 k Ω

HTS Code :

8541.21.00.75

Max Power Dissipation :

200mW

Collector Emitter Voltage (VCEO) :

300mV

Factory Lead Time :

13 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

ECCN Code :

EAR99

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

Terminal Position :

Dual

Pin Count :

3

Transistor Application :

SWITCHING

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mounting Type :

Surface Mount

Max Collector Current :

500mA

Collector Emitter Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

10

Polarity :

PNP

Transition Frequency :

200MHz

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Frequency - Transition :

200MHz

Element Configuration :

Single

REACH SVHC :

No SVHC