DMP2165UW-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

2.5A

Terminal Position :

Dual

Surface Mount :

yes

Vgs (Max) :

±12V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

500mW Ta

FET Type :

P-Channel

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

3.5nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

JESD-609 Code :

e3

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

90m Ω @ 1.5A, 4.5V

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.09Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Terminations :

3

JESD-30 Code :

R-PDSO-G3

Input Capacitance (Ciss) (Max) @ Vds :

335pF @ 15V

Package / Case :

SC-70, SOT-323

DS Breakdown Voltage-Min :

20V

Factory Lead Time :

17 Weeks