DMN61D9UW-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

28.5pF @ 30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Reference Standard :

AEC-Q101

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

High Reliability

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

0.34A

Terminal Form :

Gull wing

Power Dissipation-Max :

320mW Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Published :

2015

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 5V

Rds On (Max) @ Id, Vgs :

2 Ω @ 50mA, 5V

Gate Charge (Qg) (Max) @ Vgs :

0.4nC @ 4.5V

Vgs(th) (Max) @ Id :

1V @ 250μA

DS Breakdown Voltage-Min :

60V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

60V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

340mA Ta

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

ECCN Code :

EAR99

FET Type :

N-Channel

Number of Elements :

1

Factory Lead Time :

14 Weeks

Drain-source On Resistance-Max :

3.5Ohm

Mount :

Surface Mount

Package / Case :

SC-70, SOT-323

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

340mA

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

JESD-30 Code :

R-PDSO-G3