DMN4800LSSL-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

4.5ns

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Number of Terminations :

8

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

8A

Operating Mode :

ENHANCEMENT MODE

Length :

4.95mm

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

6.7A

ECCN Code :

EAR99

Fall Time (Typ) :

8.55 ns

Turn On Delay Time :

5.03 ns

Number of Elements :

1

Drain to Source Breakdown Voltage :

30V

Factory Lead Time :

15 Weeks

Additional Feature :

High Reliability

Gate Charge (Qg) (Max) @ Vgs :

8.7nC @ 5V

Pin Count :

8

Pbfree Code :

yes

Width :

3.95mm

Weight :

73.992255mg

Rds On (Max) @ Id, Vgs :

14m Ω @ 8A, 10V

Lead Free :

Lead Free

Number of Pins :

8

Number of Channels :

1

Radiation Hardening :

No

REACH SVHC :

No SVHC

Height :

1.5mm

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2012

Power Dissipation-Max :

1.46W Ta

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Turn-Off Delay Time :

26.33 ns

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

798pF @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

50A

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Vgs (Max) :

±20V