DMN1019UFDE-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Power Dissipation-Max :

690mW Ta

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

JESD-609 Code :

e4

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

10m Ω @ 9.7A, 4.5V

Radiation Hardening :

No

Height :

580μm

Contact Plating :

Gold

Rise Time :

22.2ns

JESD-30 Code :

R-PDSO-N3

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

2425pF @ 10V

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

12V

Continuous Drain Current (ID) :

11A

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Factory Lead Time :

14 Weeks

Transistor Application :

SWITCHING

Package / Case :

6-UDFN Exposed Pad

Published :

2017

Element Configuration :

Single

Number of Terminations :

3

Transistor Element Material :

SILICON

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

50.6nC @ 8V

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Vgs (Max) :

±8V

Width :

2.05mm

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Additional Feature :

High Reliability

Number of Pins :

6

Turn-Off Delay Time :

57.6 ns

Length :

2.05mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Fall Time (Typ) :

16.8 ns

Gate to Source Voltage (Vgs) :

8V

Vgs(th) (Max) @ Id :

800mV @ 250μA

FET Type :

N-Channel

Turn On Delay Time :

7.6 ns