DDB2U30N08VRBOMA1
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- Mfr.Part #
- DDB2U30N08VRBOMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MOD 600V 25A 83.5W
- Stock
- 4,688
- In Stock ：
- 4,688
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Package / Case :
- Module
- Mounting Type :
- Chassis Mount
- Case Connection :
- Isolated
- RoHS Status :
- RoHS Compliant
- Turn Off Time-Nom (toff) :
- 145 ns
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 600V
- Number of Pins :
- 750
- Current - Collector Cutoff (Max) :
- 1mA
- Lead Free :
- Contains Lead
- Pbfree Code :
- No
- Height :
- 12mm
- Width :
- 25.4mm
- Power - Max :
- 83.5W
- Pin Count :
- 12
- Transistor Element Material :
- SILICON
- Input :
- Standard
- Published :
- 2006
- Length :
- 35.6mm
- NTC Thermistor :
- yes
- Terminal Position :
- UPPER
- Halogen Free :
- Not Halogen Free
- Terminal Form :
- UNSPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Configuration :
- 3 Independent
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Polarity/Channel Type :
- N-Channel
- Number of Terminations :
- 12
- Mount :
- Screw
- Turn On Time :
- 38 ns
- Max Repetitive Reverse Voltage (Vrrm) :
- 800V
- JESD-30 Code :
- R-XUFM-X12
- Vce(on) (Max) @ Vge, Ic :
- 2.55V @ 15V, 20A
- Input Capacitance (Cies) @ Vce :
- 880pF @ 25V
- Operating Temperature :
- -40°C~125°C
- Max Collector Current :
- 25A
- Datasheets
- DDB2U30N08VRBOMA1
DDB2U30N08VRBOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
DDB2U30N08VRBOMA1 Description
DDB2U30N08VRBOMA1 is a 800v IGBT. The transistor DDB2U30N08VRBOMA1 can be applied in Industrial, Lighting, Enterprise systems, Datacenter & enterprise computing, Personal electronics, and Tablet applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor DDB2U30N08VRBOMA1 is in the tray package with 83W power dissipation.
DDB2U30N08VRBOMA1 Features
Repetitive peak reverse voltage: 800V
forward current RMS maximum per diode Tc = 80°C: 48A
Surge forward current tp= 10 ms, Tvj= 25°C: 480A
Gate-emitter peak voltage VGEs: +/-20 V
Gate-emitter leakage current VcE=0 V,VGE= 20V, Tvj = 25°C IGEs: 400 nA
DDB2U30N08VRBOMA1 Applications
Industrial
Lighting
Enterprise systems
Datacenter & enterprise computing
Personal electronics
Tablets
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