CY14B104N-BA20XI
- Mfr.Part #
- CY14B104N-BA20XI
- Manufacturer
- Infineon Technologies
- Package / Case
- 48-TFBGA
- Datasheet
- Download
- Description
- IC NVSRAM 4MBIT PARALLEL 48FBGA
- Stock
- 16,544
- In Stock :
- 16,544
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Memory
- Height Seated (Max) :
- 1.2mm
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- BOTTOM
- Operating Mode :
- ASYNCHRONOUS
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e1
- Write Cycle Time - Word, Page :
- 20ns
- Memory Interface :
- Parallel
- Factory Lead Time :
- 13 Weeks
- Power Supplies :
- 3/3.3V
- Reach Compliance Code :
- Unknown
- Operating Temperature :
- -40°C~85°C TA
- Organization :
- 256KX16
- Memory Width :
- 16
- Access Time (Max) :
- 20 ns
- Standby Current-Max :
- 0.005A
- Base Part Number :
- CY14B104
- Published :
- 2007
- Terminal Pitch :
- 0.75mm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pin Count :
- 48
- Number of Terminations :
- 48
- Memory Format :
- NVSRAM
- Time@Peak Reflow Temperature-Max (s) :
- 20
- JESD-30 Code :
- R-PBGA-B48
- Supply Current-Max :
- 0.07mA
- Memory Type :
- Non-Volatile
- Qualification Status :
- Not Qualified
- Memory Density :
- 4194304 bit
- Supply Voltage :
- 3V
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Supply :
- 2.7V~3.6V
- Width :
- 6mm
- Memory Size :
- 4Mb 256K x 16
- ECCN Code :
- 3A991.B.2.A
- Supply Voltage-Max (Vsup) :
- 3.6V
- Number of Functions :
- 1
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Package / Case :
- 48-TFBGA
- Length :
- 10mm
- Supply Voltage-Min (Vsup) :
- 2.7V
- Surface Mount :
- yes
- HTS Code :
- 8542.32.00.41
- Datasheets
- CY14B104N-BA20XI

Memory Infineon Technologies CY14B104N-BA20XI Overview
The CY14B104N-BA20XI by Infineon Technologies is a cutting-edge Non-Volatile SRAM (NVSRAM) component designed for high reliability and durability. This 4Mbit memory device operates through a parallel interface and is encapsulated in a compact 48-pin FBGA package, ensuring high density and minimal footprint on system boards. Ideal for applications requiring frequent and rapid access to large volumes of data, the Memory Infineon Technologies CY14B104N-BA20XI offers the perfect blend of traditional SRAM speed with non-volatile data retention, making it indispensable in critical data storage applications where the loss of information cannot be afforded.
CY14B104N-BA20XI Features
This NVSRAM unit boasts several features that make it superior for robust applications, including: - 4Mbit storage capacity offering ample space for high-density data accumulation. - Parallel interface for rapid data transfer rates that do not compromise the integrity and speed of data access. - Low power consumption which enhances the overall energy efficiency of the device. - Data retention capabilities without the need for an external battery, facilitated by QuantumTrap technology. - Operates across a wide range of temperatures, making it suitable for use in extreme environments.
CY14B104N-BA20XI Applications
- Industrial Automation: Utilized in PLCs (Programmable Logic Controllers) to ensure data persistence across power cycles, enhancing system reliability.
- Networking: Critical for use in network routers and switches to store configuration and state information, facilitating quick recovery and initialization.
- Medical Devices: Employed in medical monitoring systems to retain vital patient data, ensuring availability even after power loss.
- Aerospace: Suitable for use in flight navigation systems where data integrity and fault tolerance are paramount.
- Automotive: Used in automotive electronics to store real-time sensor data, aiding in fault diagnosis and system checks.
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