CY14B101L-SZ45XI

Manufacturer :

Infineon Technologies

Product Category :

Memory

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Number of Functions :

1

Length :

20.726mm

Terminal Finish :

Matte Tin (Sn)

Height Seated (Max) :

2.54mm

Supply Voltage-Min (Vsup) :

2.7V

Operating Supply Voltage :

3.3V

Time@Peak Reflow Temperature-Max (s) :

20

Memory Format :

NVSRAM

Operating Temperature :

-40°C~85°C TA

Density :

1 Mb

Peak Reflow Temperature (Cel) :

260

Standby Current-Max :

0.003A

Number of Pins :

32

Lead Free :

Lead Free

Access Time (Max) :

45 ns

Write Cycle Time - Word, Page :

45ns

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Voltage - Supply :

2.7V~3.6V

Supply Current-Max :

0.055mA

Memory Interface :

Parallel

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Supply Voltage-Max (Vsup) :

3.6V

Supply Voltage :

3V

Terminal Position :

Dual

Terminal Pitch :

1.27mm

Package / Case :

32-SOIC (0.295, 7.50mm Width)

Memory Type :

Non-Volatile

Base Part Number :

CY14B101

Organization :

128KX8

Pin Count :

32

JESD-609 Code :

e3

Memory Size :

1Mb 128K x 8

Number of Terminations :

32

Published :

2009

Data Bus Width :

8B

Memory Width :

8

Surface Mount :

yes

ECCN Code :

EAR99