CSD16409Q3

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

15A Ta 60A Tc

ECCN Code :

EAR99

Threshold Voltage :

2V

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

16V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Termination :

SMD/SMT

JESD-609 Code :

e3

Package / Case :

8-PowerTDFN

Length :

3.3mm

Gate Charge (Qg) (Max) @ Vgs :

5.6nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Pbfree Code :

yes

Factory Lead Time :

12 Weeks

Contact Plating :

Tin

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.1mm

Power Dissipation :

2.6W

Lead Free :

Contains Lead

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

25V

Series :

NexFET™

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

+16V, -12V

Terminal Position :

Dual

Power Dissipation-Max :

2.6W Ta

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Nominal Vgs :

2 V

Transistor Application :

SWITCHING

Turn On Delay Time :

6.5 ns

Width :

3.3mm

Base Part Number :

CSD16409

Number of Terminations :

5

Dual Supply Voltage :

25V

Continuous Drain Current (ID) :

60A

Radiation Hardening :

No

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

90A

Fall Time (Typ) :

3.4 ns

Avalanche Energy Rating (Eas) :

72 mJ

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Rise Time :

10.6ns

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 17A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Feedback Cap-Max (Crss) :

55 pF

Turn-Off Delay Time :

6.3 ns

Thickness :

1mm

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 12.5V