CSD16408Q5C

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

Gate to Source Voltage (Vgs) :

16V

Nominal Vgs :

1.8 V

Power Dissipation-Max :

3.1W Ta

Threshold Voltage :

1.8V

Packaging :

Tape and Reel (TR)

Series :

NexFET™

Vgs (Max) :

+16V, -12V

Package / Case :

8-PowerTDFN

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

22A Ta 113A Tc

ECCN Code :

EAR99

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 12.5V

Mount :

Surface Mount

Qualification Status :

Not Qualified

Number of Pins :

8

Contact Plating :

Tin

Lead Free :

Contains Lead

Length :

5mm

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Rise Time :

25ns

Number of Elements :

1

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED

Base Part Number :

CSD16408

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height :

1.05mm

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 25A, 10V

Transistor Element Material :

SILICON

Width :

6mm

Continuous Drain Current (ID) :

113A

REACH SVHC :

No SVHC

Power Dissipation :

3.1W

Transistor Application :

SWITCHING

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

8.9nC @ 4.5V

Turn-Off Delay Time :

11 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

10.8 ns

Turn On Delay Time :

11.3 ns

Lifecycle Status :

NRND (Last Updated: 4 weeks ago)

Terminal Position :

Dual

Thickness :

1mm

Terminal Form :

NO LEAD

Drain to Source Breakdown Voltage :

25V