CSD16407Q5

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED

Number of Terminations :

5

Turn-Off Delay Time :

16 ns

Series :

NexFET™

RoHS Status :

ROHS3 Compliant

Base Part Number :

CSD16407

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

31A Ta 100A Tc

Termination :

SMD/SMT

Rise Time :

18.4ns

Contact Plating :

Tin

Dual Supply Voltage :

25V

Drain to Source Breakdown Voltage :

25V

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

200A

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Width :

6mm

Gate to Source Voltage (Vgs) :

16V

Factory Lead Time :

12 Weeks

Number of Elements :

1

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

8-PowerTDFN

Input Capacitance (Ciss) (Max) @ Vds :

2660pF @ 12.5V

Nominal Vgs :

1.6 V

Transistor Element Material :

SILICON

Mount :

Surface Mount

Threshold Voltage :

1.6V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Vgs (Max) :

+16V, -12V

Drain-source On Resistance-Max :

0.0033Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Length :

5mm

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Turn On Delay Time :

11.9 ns

Power Dissipation-Max :

3.1W Ta

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Position :

Dual

Case Connection :

DRAIN

Fall Time (Typ) :

9 ns

JESD-609 Code :

e3

Height :

1.05mm

FET Type :

N-Channel

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 25A, 10V

Pin Count :

8

Power Dissipation :

3.1W

Thickness :

1mm

Continuous Drain Current (ID) :

100A