BZX79-B2V4,113

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Terminal Form :

Wire

Diode Element Material :

SILICON

Max Power Dissipation :

400mW

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Operating Temperature :

-65°C~200°C

Diode Type :

ZENER DIODE

Lead Free :

Lead Free

Zener Voltage :

2.4V

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Power Dissipation :

500mW

Pin Count :

2

JESD-609 Code :

e3

Current - Reverse Leakage @ Vr :

50μA @ 1V

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Max Reverse Leakage Current :

50μA

Mount :

Through Hole

Factory Lead Time :

6 Weeks

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Through Hole

Base Part Number :

BZX79B2V4

Published :

2009

Tolerance :

±2%

Polarity :

Unidirectional

Package / Case :

DO-204AH, DO-35, Axial

ESD Protection :

No

HTS Code :

8541.10.00.50

Voltage Tol-Max :

2%

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

2

Number of Terminations :

2

Impedance :

100Ohm

ECCN Code :

EAR99

Reference Voltage :

2.4V

Test Current :

5mA

Voltage Tolerance :

2%

Impedance-Max :

100Ohm

Voltage - Forward (Vf) (Max) @ If :

900mV @ 10mA