BUK9Y12-55B,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

4

Rds On (Max) @ Id, Vgs :

11m Ω @ 20A, 10V

Package / Case :

SC-100, SOT-669

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±15V

Number of Pins :

4

Case Connection :

DRAIN

Rise Time :

78ns

Published :

2010

Continuous Drain Current (ID) :

61.8A

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Current - Continuous Drain (Id) @ 25°C :

61.8A Tc

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Turn On Delay Time :

29 ns

Number of Terminations :

4

JEDEC-95 Code :

MO-235

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

15V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2880pF @ 25V

Surface Mount :

yes

Power Dissipation :

106W

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Fall Time (Typ) :

63 ns

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Mounting Type :

Surface Mount

Series :

Automotive, AEC-Q101, TrenchMOS™

Number of Elements :

1

Max Dual Supply Voltage :

55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

106W Tc

Terminal Form :

Gull wing

Turn-Off Delay Time :

100 ns

Factory Lead Time :

12 Weeks