BUK9832-55A,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1594pF @ 25V

Transistor Element Material :

SILICON

Package / Case :

TO-261-4, TO-261AA

DS Breakdown Voltage-Min :

55V

Drain-source On Resistance-Max :

0.036Ohm

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Surface Mount :

yes

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

8W Tc

Vgs (Max) :

±10V

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

55V

Number of Terminations :

4

Published :

2010

JESD-30 Code :

R-PDSO-G4

Pulsed Drain Current-Max (IDM) :

47A

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

12A

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Series :

Automotive, AEC-Q101, TrenchMOS™

HTS Code :

8541.29.00.75

Avalanche Energy Rating (Eas) :

100 mJ

Pin Count :

4

Rds On (Max) @ Id, Vgs :

29m Ω @ 8A, 10V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

2V @ 1mA

Qualification Status :

Not Qualified