BUK9520-100A,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Power Dissipation-Max :

200W Tc

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.022Ohm

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Surface Mount :

No

JEDEC-95 Code :

TO-220AB

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

253A

Transistor Element Material :

SILICON

Reach Compliance Code :

Compliant

HTS Code :

8541.29.00.75

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

100V

Package / Case :

TO-220-3

Packaging :

Tube

Mounting Type :

Through Hole

Vgs (Max) :

±10V

JESD-609 Code :

e3

ECCN Code :

EAR99

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

63A

Avalanche Energy Rating (Eas) :

420 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

100V

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

63A Tc

Series :

TrenchMOS™

Input Capacitance (Ciss) (Max) @ Vds :

6385pF @ 25V

Rds On (Max) @ Id, Vgs :

19m Ω @ 25A, 10V