BUK7C08-55AITE,118

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Mfr.Part #
BUK7C08-55AITE,118
Manufacturer
Nexperia
Package / Case
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Datasheet
Download
Description
MOSFET N-CH 55V 75A D2PAK
Stock
35,788
In Stock :
35,788

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Manufacturer :
Nexperia
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Lead Free :
Lead Free
Published :
2008
Continuous Drain Current (ID) :
130A
Operating Temperature :
-55°C~175°C TJ
Fall Time (Typ) :
110 ns
Transistor Element Material :
SILICON
Number of Terminations :
6
JESD-30 Code :
R-PSSO-G6
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Max Dual Supply Voltage :
55V
Drain-source On Resistance-Max :
0.008Ohm
Contact Plating :
Tin
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
12 Weeks
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 1mA
Turn-Off Delay Time :
155 ns
Time@Peak Reflow Temperature-Max (s) :
30
FET Feature :
Current Sensing
Gate Charge (Qg) (Max) @ Vgs :
116nC @ 10V
Avalanche Energy Rating (Eas) :
460 mJ
Rds On (Max) @ Id, Vgs :
8m Ω @ 50A, 10V
Pin Count :
7
Transistor Application :
SWITCHING
Case Connection :
DRAIN
Rise Time :
115ns
Peak Reflow Temperature (Cel) :
245
Series :
Automotive, AEC-Q101, TrenchMOS™
Packaging :
Tape and Reel (TR)
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Terminal Form :
Gull wing
Drain to Source Breakdown Voltage :
55V
JESD-609 Code :
e3
Radiation Hardening :
No
Gate to Source Voltage (Vgs) :
20V
Pulsed Drain Current-Max (IDM) :
522A
Turn On Delay Time :
35 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
272W Tc
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Vgs (Max) :
±20V
Surface Mount :
yes
Mounting Type :
Surface Mount
Power Dissipation :
272W
Number of Pins :
7
Input Capacitance (Ciss) (Max) @ Vds :
4200pF @ 25V
Introducing Transistors - FETs, MOSFETs - Single Nexperia BUK7C08-55AITE,118 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:6, Package / Case:TO-263-7, D2Pak (6 Leads + Tab), TO-263CB, Mounting Type:Surface Mount, Number of Pins:7, BUK7C08-55AITE,118 pinout, BUK7C08-55AITE,118 datasheet PDF, BUK7C08-55AITE,118 amp .Beyond Transistors - FETs, MOSFETs - Single Nexperia BUK7C08-55AITE,118 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia BUK7C08-55AITE,118


N-Channel Tape & Reel (TR) 8m Ω @ 50A, 10V ±20V 4200pF @ 25V 116nC @ 10V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

BUK7C08-55AITE,118 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 460 mJ.The maximum input capacitance of this device is 4200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 130A.When VGS=55V, and ID flows to VDS at 55VVDS, the drain-source breakdown voltage is 55V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 155 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 522A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 35 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 55V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.

BUK7C08-55AITE,118 Features


the avalanche energy rating (Eas) is 460 mJ
a continuous drain current (ID) of 130A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 155 ns
based on its rated peak drain current 522A.


BUK7C08-55AITE,118 Applications


There are a lot of Nexperia USA Inc.
BUK7C08-55AITE,118 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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