BUK7635-55A,118

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

49 mJ

Turn On Delay Time :

10 ns

Case Connection :

DRAIN

Vgs (Max) :

±20V

Factory Lead Time :

12 Weeks

Published :

2011

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

35m Ω @ 20A, 10V

Max Dual Supply Voltage :

55V

Number of Pins :

3

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 1mA

Fall Time (Typ) :

20 ns

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Power Dissipation-Max :

85W Tc

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Radiation Hardening :

No

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

872pF @ 25V

ECCN Code :

EAR99

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

24 ns

Rise Time :

62ns

Power Dissipation :

85W

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Pin Count :

3

Continuous Drain Current (ID) :

35A

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

55V

Terminal Form :

Gull wing

Contact Plating :

Tin

Series :

Automotive, AEC-Q101, TrenchMOS™