BUK761R7-40E118
- Mfr.Part #
- BUK761R7-40E118
- Manufacturer
- Nexperia
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- NOW NEXPERIA BUK761R7-40E - POWE
- Stock
- 24,037
- In Stock :
- 24,037
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- Manufacturer :
- Nexperia
- Product Category :
- Specialized ICs
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Factory Lead Time :
- 6 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 118nC @ 10V
- Material :
- Brass
- Rds On (Max) @ Id, Vgs :
- 1.6m Ω @ 25A, 10V
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn-Off Delay Time :
- 87 ns
- Additional Feature :
- AVALANCHE RATED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Pin Count :
- 3
- Surface Mount :
- yes
- Continuous Drain Current (ID) :
- 120A
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1
- Vgs (Max) :
- ±20V
- Wire Gauge (Max) :
- 18 AWG
- Reach Compliance Code :
- not_compliant
- Drain to Source Breakdown Voltage :
- 40V
- Power Dissipation-Max :
- 324W Tc
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Operating Temperature :
- -55°C~175°C TJ
- Wire Gauge (Min) :
- 16 AWG
- Number of Elements :
- 1
- Max Dual Supply Voltage :
- 40V
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 35 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 9700pF @ 25V
- Termination :
- Crimp
- Rise Time :
- 49ns
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 52 ns
- Plating :
- Gold, Tin
- Published :
- 2014
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Datasheets
- BUK761R7-40E118
Specialized ICs Nexperia BUK761R7-40E,118 Overview
The Specialized ICs Nexperia BUK761R7-40E,118 is a high-performance N-channel MOSFET that offers superior power management solutions tailored for demanding applications. With a drain-source voltage of 40V and a continuous drain current of 120A, this robust component ensures efficient handling of high power densities. Its low on-state resistance of 1.6m Ω at 25A, combined with the gate-source voltage of 10V, maximizes conductivity while minimizing power loss, making it an ideal choice for energy-sensitive projects.
The device features a minimal input capacitance of 9700pF at 25V which facilitates faster switching and reduced gate charge of 118nC at 10V. Encapsulated in a durable TO-263-3, D2Pak packaging, the BUK761R7-40E,118 is designed to withstand rigorous operational conditions while providing a reliable and long-lasting power solution.
Key Features
This device boasts several key features that make it a premium choice for power applications:
- Low on-state resistance (1.6m Ω) for increased efficiency and lower heat generation.
- High drain-source breakdown voltage of 40V allows for robust, reliable operations under high voltages.
- Maximum continuous drain current of 120A, suitable for high-power applications.
- Fast switching capabilities with a turn-off delay time of 87 ns, improving performance in critical applications.
- Durable and heat-resistant TO-263-3, D2Pak packaging, ensuring long service life even under challenging environmental conditions.
Applications
The BUK761R7-40E,118 MOSFET is versatile and can be utilized in a wide range of applications:
- Power management in automotive systems, ensuring safe and efficient energy use.
- DC/DC converters, providing stable and efficient voltage conversion for various electronic devices.
- Motor drives and Uninterruptible Power Supplies (UPS), critical for maintaining operations without power interruptions.
- Renewable energy applications, including micro solar inverters that convert solar energy into usable electrical power.
- High-performance computing and telecom power supplies, where stable and reliable power is essential.
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