BUK753R8-80E,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Series :

Automotive, AEC-Q101, TrenchMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

4m Ω @ 25A, 10V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 1mA

Published :

2012

Vgs (Max) :

±20V

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

758A

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Power Dissipation-Max :

349W Tc

Transistor Element Material :

SILICON

Surface Mount :

No

Terminal Position :

Single

Case Connection :

DRAIN

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Turn-Off Delay Time :

129 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Rise Time :

48ns

Gate Charge (Qg) (Max) @ Vgs :

169nC @ 10V

Fall Time (Typ) :

65 ns

Additional Feature :

AVALANCHE RATED

Turn On Delay Time :

38 ns

Packaging :

Tube

Drain-source On Resistance-Max :

0.004ohm

Avalanche Energy Rating (Eas) :

488 mJ

Input Capacitance (Ciss) (Max) @ Vds :

12030pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

120A

Max Dual Supply Voltage :

80V

Operating Temperature :

-55°C~175°C TJ