BTS282ZE3230AKSA2

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Mfr.Part #
BTS282ZE3230AKSA2
Manufacturer
Infineon Technologies
Package / Case
TO-220-7
Datasheet
Download
Description
MOSFET N-CH 49V 80A TO220-7
Stock
18,169
In Stock :
18,169

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
37ns
Number of Elements :
1
Contact Plating :
Tin
Supplier Device Package :
PG-TO220-7-12
Mounting Type :
Through Hole
Max Dual Supply Voltage :
49V
Gate to Source Voltage (Vgs) :
20V
Package / Case :
TO-220-7
Drain to Source Voltage (Vdss) :
49V
Packaging :
Tube
Number of Channels :
1
Rds On Max :
6.5 mΩ
Min Operating Temperature :
-40°C
Power Dissipation-Max :
300W Tc
Output Voltage :
40V
Operating Temperature :
-40°C~175°C TJ
Number of Pins :
7
Max Operating Temperature :
175°C
Vgs(th) (Max) @ Id :
2V @ 240µA
Voltage - Rated DC :
49V
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Factory Lead Time :
18 Weeks
Current Rating :
1.7A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Feature :
Temperature Sensing Diode
Series :
TEMPFET®
Published :
2004
Drain to Source Resistance :
5.8mOhm
Lead Free :
Contains Lead
Continuous Drain Current (ID) :
80A
Gate Charge (Qg) (Max) @ Vgs :
232nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Halogen Free :
Halogen Free
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
6.5mOhm @ 36A, 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
Input Capacitance :
4.8nF
FET Type :
N-Channel
Power Dissipation :
300W
Mount :
Through Hole
Datasheets
BTS282ZE3230AKSA2
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BTS282ZE3230AKSA2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-7, Number of Channels:1, Operating Temperature:-40°C~175°C TJ, Number of Pins:7, BTS282ZE3230AKSA2 pinout, BTS282ZE3230AKSA2 datasheet PDF, BTS282ZE3230AKSA2 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BTS282ZE3230AKSA2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BTS282ZE3230AKSA2


N-Channel Tube 6.5mOhm @ 36A, 10V ±20V 4800pF @ 25V 232nC @ 10V 49V TO-220-7

BTS282ZE3230AKSA2 Overview


The maximum input capacitance of this device is 4800pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 80A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 5.8mOhm.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 49V power supply, it is capable of handling a dual voltage maximum.The drain-to-source voltage (Vdss) of this transistor needs to be at 49V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

BTS282ZE3230AKSA2 Features


a continuous drain current (ID) of 80A
single MOSFETs transistor is 5.8mOhm
a 49V drain to source voltage (Vdss)


BTS282ZE3230AKSA2 Applications


There are a lot of Infineon Technologies
BTS282ZE3230AKSA2 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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