BSS225H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Flat

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

0.09A

JESD-30 Code :

R-PSSO-F3

Surface Mount :

yes

Transistor Element Material :

SILICON

Factory Lead Time :

16 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

600V

HTS Code :

8541.29.00.95

Power Dissipation-Max :

1W Ta

Gate Charge (Qg) (Max) @ Vgs :

5.8nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

90mA Ta

Published :

2011

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

131pF @ 25V

Vgs(th) (Max) @ Id :

2.3V @ 94µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-243AA

Number of Terminations :

3

Feedback Cap-Max (Crss) :

4.4 pF

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

600V

Rds On (Max) @ Id, Vgs :

45 Ω @ 90mA, 10V

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

SIPMOS™

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Position :

Single

Mounting Type :

Surface Mount