BSS123TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.8V @ 1mA

ECCN Code :

EAR99

Vgs (Max) :

±20V

Power Dissipation-Max :

360mW Ta

Feedback Cap-Max (Crss) :

4 pF

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

10

Turn-Off Delay Time :

15 ns

Voltage - Rated DC :

100V

Rise Time :

10ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

JESD-30 Code :

R-PDSO-G3

Number of Elements :

1

Package / Case :

TO-236-3, SC-59, SOT-23-3

Height :

1mm

Length :

2.9mm

Operating Temperature :

-55°C~150°C TJ

Published :

2012

Element Configuration :

Single

Drain-source On Resistance-Max :

6Ohm

REACH SVHC :

No SVHC

Weight :

7.994566mg

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

170mA

Number of Terminations :

3

Terminal Position :

Dual

Mounting Type :

Surface Mount

Width :

1.3mm

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Mount :

Surface Mount

Current Rating :

170mA

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

10 ns

Turn On Delay Time :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

20pF @ 25V

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

100V

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

6 Ω @ 100mA, 10V

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Power Dissipation :

360mW

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON