BSP324H6327XTSA1
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- Mfr.Part #
- BSP324H6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 170MA SOT223-4
- Stock
- 10,222
- In Stock ：
- 10,222
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Dual Supply Voltage :
- 400V
- Package / Case :
- TO-261-4, TO-261AA
- Min Operating Temperature :
- -55°C
- Rise Time :
- 4.4ns
- Mount :
- Surface Mount
- Max Operating Temperature :
- 150°C
- Halogen Free :
- Halogen Free
- Input Capacitance :
- 154pF
- Drain to Source Resistance :
- 13.6Ohm
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Nominal Vgs :
- 1.9 V
- Element Configuration :
- Single
- Fall Time (Typ) :
- 68 ns
- Packaging :
- Cut Tape (CT)
- Turn On Delay Time :
- 4.6 ns
- Rds On Max :
- 25 Ω
- Width :
- 6.7mm
- Contact Plating :
- Tin
- Power Dissipation :
- 1.7W
- REACH SVHC :
- No SVHC
- Published :
- 2008
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 170mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 25Ohm @ 170mA, 10V
- Threshold Voltage :
- 1.9V
- Supplier Device Package :
- PG-SOT223-4
- Height :
- 1.6mm
- Series :
- SIPMOS®
- Length :
- 6.5mm
- Factory Lead Time :
- 10 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 5.9nC @ 10V
- Power Dissipation-Max :
- 1.8W Ta
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Dual Supply Voltage :
- 400V
- Drain to Source Voltage (Vdss) :
- 400V
- Turn-Off Delay Time :
- 17 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 154pF @ 25V
- Termination :
- SMD/SMT
- Vgs(th) (Max) @ Id :
- 2.3V @ 94µA
- Number of Pins :
- 3
- Datasheets
- BSP324H6327XTSA1
N-Channel Cut Tape (CT) 25Ohm @ 170mA, 10V ±20V 154pF @ 25V 5.9nC @ 10V 400V TO-261-4, TO-261AA
BSP324H6327XTSA1 Overview
A device's maximal input capacitance is 154pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 170mA, which represents the maximum continuous current it can conduct.Its turn-off delay time is 17 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 13.6Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 4.6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 400V, it can supply the maximum voltage from two sources.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1.9V threshold voltage.This transistor requires a 400V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
BSP324H6327XTSA1 Features
a continuous drain current (ID) of 170mA
the turn-off delay time is 17 ns
single MOSFETs transistor is 13.6Ohm
a threshold voltage of 1.9V
a 400V drain to source voltage (Vdss)
BSP324H6327XTSA1 Applications
There are a lot of Infineon Technologies
BSP324H6327XTSA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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