BSP32,115
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- Mfr.Part #
- BSP32,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT223
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 4
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PDSO-G4
- Terminal Position :
- Dual
- Max Collector Current :
- 1A
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Frequency :
- 100MHz
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Published :
- 2009
- Packaging :
- Tape and Reel (TR)
- Turn On Time-Max (ton) :
- 500ns
- Package / Case :
- TO-261-4, TO-261AA
- Collector Emitter Breakdown Voltage :
- 80V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- BSP32
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 1.3W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 100mA 5V
- Collector-Base Capacitance-Max :
- 20pF
- Number of Pins :
- 73
- Turn Off Time-Max (toff) :
- 650ns
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 80V
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1.3W
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Pin Count :
- 4
- Collector Base Voltage (VCBO) :
- 90V
- Datasheets
- BSP32,115
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP32,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 100mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 1A volts.
BSP32,115 Features
the DC current gain for this device is 40 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BSP32,115 Applications
There are a lot of Nexperia USA Inc.
BSP32,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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