BSP129H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.7W

Drain to Source Breakdown Voltage :

240V

Nominal Vgs :

-1.4 V

Turn-Off Delay Time :

22 ns

Dual Supply Voltage :

240V

REACH SVHC :

No SVHC

Packaging :

Cut Tape (CT)

Rise Time :

4.1ns

Max Dual Supply Voltage :

240V

Turn On Delay Time :

4.4 ns

Operating Temperature :

-55°C~150°C TJ

Length :

6.5mm

Current :

35A

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Continuous Drain Current (ID) :

120mA

JESD-609 Code :

e3

Number of Elements :

1

Factory Lead Time :

10 Weeks

Series :

SIPMOS®

Transistor Element Material :

SILICON

FET Feature :

Depletion Mode

Termination :

SMD/SMT

Radiation Hardening :

No

ECCN Code :

EAR99

Threshold Voltage :

-2.1V

Contact Plating :

Tin

Number of Channels :

1

Vgs(th) (Max) @ Id :

1V @ 108µA

Voltage :

240V

Mount :

Surface Mount

Terminal Form :

Gull wing

Case Connection :

DRAIN

FET Type :

N-Channel

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

Width :

3.5mm

Gate Charge (Qg) (Max) @ Vgs :

5.7nC @ 5V

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

Published :

2012

Power Dissipation-Max :

1.8W Ta

Height :

1.8mm

Package / Case :

TO-261-4, TO-261AA

Manufacturer Package Identifier :

PG-SOT223-4

Vgs (Max) :

±20V

Max Junction Temperature (Tj) :

150°C

Number of Pins :

4

Input Capacitance (Ciss) (Max) @ Vds :

108pF @ 25V

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

6 Ω @ 350mA, 10V

Fall Time (Typ) :

35 ns

Mounting Type :

Surface Mount

Pin Count :

4

Lead Free :

Lead Free

Pbfree Code :

yes

Number of Terminations :

4

Drain-source On Resistance-Max :

20Ohm