BSC159N10LSFGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

9.4A Ta 63A Tc

Avalanche Energy Rating (Eas) :

155 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

JESD-30 Code :

R-PDSO-F5

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 50V

Power Dissipation-Max :

114W Tc

Pbfree Code :

No

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

252A

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

100V

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

9.4A

Rds On (Max) @ Id, Vgs :

15.9m Ω @ 50A, 10V

Series :

OptiMOS™

Terminal Form :

Flat

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Drain to Source Voltage (Vdss) :

100V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Surface Mount :

yes

Package / Case :

8-PowerTDFN

Terminal Position :

Dual

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0159Ohm

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs(th) (Max) @ Id :

2.4V @ 72µA

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

26 Weeks

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)