BSC0910NDIATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Form :

NO LEAD

Max Power Dissipation :

1W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 12V

Case Connection :

DRAIN SOURCE

DS Breakdown Voltage-Min :

25V

Number of Pins :

8

Drain-source On Resistance-Max :

0.0059Ohm

JESD-609 Code :

e3

Published :

2012

Continuous Drain Current (ID) :

31A

Mounting Type :

Surface Mount

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

11A 31A

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

18 Weeks

Halogen Free :

Halogen Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

Logic Level Gate, 4.5V Drive

Operating Temperature :

-55°C~150°C TJ

Configuration :

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

FET Type :

2 N-Channel (Dual) Asymmetrical

Drain Current-Max (Abs) (ID) :

11A

Drain to Source Voltage (Vdss) :

25V

Transistor Element Material :

SILICON

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Series :

OptiMOS™

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs :

6.6nC @ 4.5V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 25A, 10V

JESD-30 Code :

R-PDSO-N6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Reach Compliance Code :

not_compliant