BSC022N03SG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

Power Dissipation-Max :

2.8W Ta 104W Tc

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

8 ns

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Vgs (Max) :

±20V

Lead Free :

Lead Free

Turn-Off Delay Time :

45 ns

Power Dissipation :

2.8W

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

200A

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 50A, 10V

Terminal Form :

Flat

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PDSO-F5

Current Rating :

50A

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

JESD-609 Code :

e3

Published :

2004

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

28A Ta 100A Tc

Package / Case :

8-PowerTDFN

Case Connection :

DRAIN

Number of Terminations :

5

Voltage - Rated DC :

30V

Continuous Drain Current (ID) :

100A

Input Capacitance (Ciss) (Max) @ Vds :

8290pF @ 15V

Rise Time :

9ns

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Pin Count :

8

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Number of Pins :

8

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

2V @ 110μA

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0033Ohm

Series :

OptiMOS™

Operating Temperature :

-55°C~150°C TJ