BQ4011MA-200

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Mfr.Part #
BQ4011MA-200
Manufacturer
Texas Instruments
Package / Case
28-DIP Module (0.61, 15.49mm)
Datasheet
Download
Description
IC NVSRAM 256KBIT PARALLEL 28DIP
Stock
4,277
In Stock :
4,277

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Manufacturer :
Texas Instruments
Product Category :
Memory
Supply Voltage :
5V
Memory Size :
256Kb 32K x 8
Memory Density :
262144 bit
Write Cycle Time - Word, Page :
200ns
Base Part Number :
BQ4011
Operating Temperature :
0°C~70°C TA
RoHS Status :
ROHS3 Compliant
Supply Current-Max :
0.075mA
Supply Voltage-Min (Vsup) :
4.75V
Standby Current-Max :
0.004A
Memory Width :
8
Number of Pins :
28
Memory Interface :
Parallel
Access Time (Max) :
200 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Functions :
1
Terminal Pitch :
2.54mm
Voltage - Supply :
4.75V~5.5V
Memory Type :
Non-Volatile
Packaging :
Tube
HTS Code :
8542.32.00.41
Package / Case :
28-DIP Module (0.61, 15.49mm)
Number of Terminations :
28
ECCN Code :
EAR99
Surface Mount :
No
Operating Mode :
ASYNCHRONOUS
Organization :
32KX8
Data Bus Width :
8B
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supply Voltage-Max (Vsup) :
5.5V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
Mounting Type :
Through Hole
Memory Format :
NVSRAM
Terminal Position :
Dual
Power Supplies :
5V
Datasheets
BQ4011MA-200
Introducing Memory Texas Instruments BQ4011MA-200 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BQ4011, Operating Temperature:0°C~70°C TA, Number of Pins:28, Package / Case:28-DIP Module (0.61, 15.49mm), Number of Terminations:28, Mounting Type:Through Hole, BQ4011MA-200 pinout, BQ4011MA-200 datasheet PDF, BQ4011MA-200 amp .Beyond Memory Texas Instruments BQ4011MA-200 ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Texas Instruments BQ4011MA-200


Memory Texas Instruments BQ4011MA-200 Overview

The Memory Texas Instruments BQ4011MA-200 is a high-performance, non-volatile static RAM (NVSRAM) designed to deliver reliability and stability in critical data storage applications. This IC features a 256 Kbit capacity with a parallel interface, housed in a robust 28-pin DIP (dual in-line package). Its ability to retain data without power makes it ideal for sophisticated electronic systems where data integrity is paramount. This product is engineered by Texas Instruments, a leader in semiconductor solutions, ensuring top-quality and performance for demanding applications.

BQ4011MA-200 Features

This NVSRAM component offers fast data access times and low power operation, enhancing its efficiency in a wide range of applications. It incorporates an automatic power-fail chip deselect and write protection, making it highly reliable under adverse conditions. Its parallel interface facilitates easy integration into existing architectures, providing a flexible and scalable solution for designers.

BQ4011MA-200 Applications

  • Industrial Automation: Utilized in controlling machinery and processes, the BQ4011MA-200 ensures data is preserved in case of sudden power outages or disruptions.
  • Telecommunications: Critical for maintaining system configurations and operational parameters in network hardware where data consistency is crucial.
  • Automotive Electronics: Supports advanced automotive systems like ECU memory backup, ensuring vehicle settings are maintained between ignition cycles.
  • Medical Equipment: Ideal for memory storage in medical devices that require fault tolerance and data integrity, ensuring patient data is safe and persistent.
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