BCW60FFE6327HTSA1
- Mfr.Part #
- BCW60FFE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A SOT23
- Stock
- 16,642
- In Stock :
- 16,642
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 32V
- Collector Emitter Voltage (VCEO) :
- 5V
- Transition Frequency :
- 250MHz
- Max Collector Current :
- 100mA
- Collector Base Voltage (VCBO) :
- 32V
- Number of Elements :
- 1
- Current Rating :
- 100mA
- Frequency :
- 250MHz
- Base Part Number :
- BCW60
- Collector Emitter Breakdown Voltage :
- 32V
- Configuration :
- Single
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Halogen Free :
- Not Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2mA 5V
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 330mW
- Published :
- 2007
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Additional Feature :
- LOW NOISE
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Power Dissipation :
- 330mW
- Contact Plating :
- Tin
- Datasheets
- BCW60FFE6327HTSA1

NPN 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW60FFE6327HTSA1 Overview
This device has a DC current gain of 250 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 550mV @ 1.25mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 250MHz.A maximum collector current of 100mA volts is possible.
BCW60FFE6327HTSA1 Features
the DC current gain for this device is 250 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 250MHz
BCW60FFE6327HTSA1 Applications
There are a lot of Infineon Technologies
BCW60FFE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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